PBSS301ND,115 NXP Semiconductors, PBSS301ND,115 Datasheet
PBSS301ND,115
Specifications of PBSS301ND,115
934059128115
PBSS301ND T/R
PBSS301ND T/R
Related parts for PBSS301ND,115
PBSS301ND,115 Summary of contents
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PBSS301ND NPN low V Rev. 03 — 7 September 2007 1. Product profile 1.1 General description NPN low V Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS301PD. 1.2 Features I Very low collector-emitter saturation resistance I ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS301ND 4. Marking Table 4. Type number PBSS301ND 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot PBSS301ND_3 Product data sheet Pinning Description ...
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... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg [1] Device mounted on a ceramic PCB, Al [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on a ceramic PCB, Al [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...
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... NXP Semiconductors th(j-a) duty cycle = (K/ 0.5 0.33 0.2 0.1 10 0.05 0.02 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 ...
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... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS301ND_3 Product data sheet Characteristics Parameter Conditions collector-base cut-off current 150 C j collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter I = 0.5 A ...
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... NXP Semiconductors 1000 h FE 800 (1) 600 (2) 400 (3) 200 ( 100 C amb ( amb ( amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 1.2 1.0 (1) 0.8 (2) 0.6 (3) 0 amb ( amb ( 100 C amb Fig 7. Base-emitter voltage as a function of collector current; typical values ...
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... NXP Semiconductors 10 V CEsat (V) 1.0 ( 100 C amb ( amb ( amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) 100 C amb ( amb ( amb Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values PBSS301ND_3 Product data sheet 006aaa330 10 V CEsat ...
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... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition oscilloscope Bon Fig 14. Test circuit for switching times PBSS301ND_3 Product data sheet (probe) 450 0. 0.15 A Boff Rev. 03 — 7 September 2007 PBSS301ND NPN low V CEsat input pulse (idealized waveform) I (100 %) Bon ...
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... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBSS301ND [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...
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... NXP Semiconductors 11. Soldering Fig 16. Reflow soldering footprint SOT457 (SC-74) 5.05 Fig 17. Wave soldering footprint SOT457 (SC-74) PBSS301ND_3 Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 03 — 7 September 2007 ...
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... Release date PBSS301ND_3 20070907 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section 1.1 “General • Table • ...
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... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...
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... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history ...