PBSS301ND,115 NXP Semiconductors, PBSS301ND,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS301ND,115
• Description: TRANS NPN 20V 4A LOW SAT SOT457
• Manufacturer: NXP Semiconductors

Specifications of PBSS301ND,115

• Package / Case: SC-74-6
• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 420mV @ 600mA, 6A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V
• Power - Max: 1.1W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 4 A
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 2500 mW
• Maximum Operating Frequency: 100 MHz (Typ)
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4149-2; 934059128115; PBSS301ND T/R; PBSS301ND T/R

NXP Semiconductors
7. Characteristics
PBSS301ND_3
Product data sheet
Table 7.
T
[1]
Symbol
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
p
300 s;
Rev. 03 — 7 September 2007
0.02.
Conditions
V
V
T
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 0.5 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 6 A; I
= 4 A; I
= 0.5 A; I
= 1 A; I
= 1 A; I
= 4 A; I
= 0.15 A;
= 0.15 A
= 5 V; I
= 20 V; I
= 20 V; I
= 20 V; V
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 12.5 V; I
= 10 V; I
= 10 V; I
B
B
B
B
B
B
B
B
C
= 50 mA
= 200 mA
= 400 mA
= 600 mA
= 400 mA
= 50 mA
= 100 mA
= 400 mA
C
C
C
C
C
B
B
C
20 V, 4 A NPN low V
E
E
C
E
= 0 A
= 50 mA
= 50 mA
= 0.5 A
= 1 A
= 2 A
= 4 A
= 6 A
= 2 A
BE
= 0 A
= 0 A;
= 0.1 A;
= i
C
= 0 V
= 3 A;
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
300
300
250
200
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS301ND
CEsat
Typ
-
-
-
-
450
430
400
310
230
30
60
110
200
300
50
0.79
0.81
0.83
1.0
0.79
12
36
48
230
50
280
100
60
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
Max
0.1
50
0.1
0.1
-
-
-
-
-
50
90
150
280
420
70
0.85
0.9
1
1.1
1
-
-
-
-
-
-
-
-
Unit
mV
mV
mV
mV
mV
m
V
V
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
6 of 14
A
A
A
A