MMBT3906,215 NXP Semiconductors, MMBT3906,215 Datasheet - Page 5

• Manufacturer Part Number: MMBT3906,215
• Description: TRANS PNP 40V 200MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBT3906,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4511-2; 933864370215; MMBT3906 T/R; MMBT3906 T/R

NXP Semiconductors
2003 Mar 18
handbook, full pagewidth
handbook, halfpage
PNP switching transistor
V CEsat
I
(1) T
(2) T
(3) T
Fig.6
V
R1 = 56 Ω; R2 = 2.5 kΩ; R
V
Oscilloscope: input impedance Z
C
(mV)
i
BB
/I
= 5 V; T = 500 µs; t
B
−10
−10
−10
= 1.9 V; V
= 10.
−10
amb
amb
amb
3
2
−1
= 25 °C.
= 150 °C.
= −55 °C.
Collector-emitter saturation voltage as a
function of collector current.
CC
= −3 V.
−1
p
(3)
(1)
(2)
= 10 µs; t
B
= 3.9 kΩ; R
i
−10
r
= 50 Ω.
= t
f
≤ 3 ns.
oscilloscope
C
= 270 Ω.
−10
V i
2
I C (mA)
Fig.7 Test circuit for switching times.
MHC463
(probe)
450 Ω
−10
3
R1
R2
R B
V BB
5
R C
V CC
DUT
V o
MGD624
(probe)
450 Ω
oscilloscope
MMBT3906
Product data sheet