MMBT3906,215 NXP Semiconductors, MMBT3906,215 Datasheet

TRANS PNP 40V 200MA SOT23

MMBT3906,215

Manufacturer Part Number
MMBT3906,215
Description
TRANS PNP 40V 200MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of MMBT3906,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60 at 0.1 mA at 1 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
250 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4511-2
933864370215
MMBT3906 T/R
MMBT3906 T/R
Product data sheet
Supersedes data of 2000 Apr 11
dbook, halfpage
DATA SHEET
MMBT3906
PNP switching transistor
DISCRETE SEMICONDUCTORS
M3D088
2003 Mar 18

Related parts for MMBT3906,215

MMBT3906,215 Summary of contents

Page 1

DATA SHEET dbook, halfpage MMBT3906 PNP switching transistor Product data sheet Supersedes data of 2000 Apr 11 DISCRETE SEMICONDUCTORS M3D088 2003 Mar 18 ...

Page 2

... NXP Semiconductors PNP switching transistor FEATURES • Collector current capability I C • Collector-emitter voltage V CEO APPLICATIONS • General switching and amplification. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: MMBT3904. MARKING TYPE NUMBER MMBT3906 Note 1. ∗ Made in Hong Kong. ...

Page 3

... NXP Semiconductors PNP switching transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain ...

Page 4

... NXP Semiconductors PNP switching transistor 600 handbook, halfpage h FE (1) 400 (2) 200 (3) 0 −1 −10 −1 −10 = − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain; typical values. −1200 handbook, halfpage V BE (mV) −1000 (1) −800 (2) −600 (3) −400 − ...

Page 5

... NXP Semiconductors PNP switching transistor −10 3 handbook, halfpage V CEsat (mV) (1) −10 (2) 2 (3) −10 −1 −10 −1 − 10 °C. (1) T amb = 150 °C. (2) T amb = −55 °C. (3) T amb Fig.6 Collector-emitter saturation voltage as a function of collector current. handbook, full pagewidth = 500 µ µ ...

Page 6

... NXP Semiconductors PNP switching transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2003 Mar scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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