MMBT3906,215 NXP Semiconductors, MMBT3906,215 Datasheet - Page 3

• Manufacturer Part Number: MMBT3906,215
• Description: TRANS PNP 40V 200MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBT3906,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4511-2; 933864370215; MMBT3906 T/R; MMBT3906 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2003 Mar 18
R
I
I
h
V
V
C
C
f
F
Switching times (between 10% and 90% levels); see Fig.7
t
t
t
t
amb
CBO
EBO
T
d
r
s
f
FE
SYMBOL
SYMBOL
CEsat
BEsat
PNP switching transistor
th j-a
c
e
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage I
collector capacitance
emitter capacitance
transition frequency
noise figure
delay time
rise time
storage time
fall time
PARAMETER
PARAMETER
I
I
V
I
I
I
I
I
f = 1 MHz
I
f = 100 MHz
I
R
I
I
E
C
C
C
C
C
E
C
C
C
Con
Boff
CE
S
I
I
I
I
I
= 0; V
= 0; V
= −10 mA; I
= −50 mA; I
= −10 mA; I
= −50 mA; I
= i
= i
= −10 mA; V
= −100 µA; V
C
C
C
C
C
= 1 kΩ; f = 10 Hz to 15.7 kHz
= 1 mA
= −10 mA; I
= −1 V; see Fig.2
= −0.1 mA
= −1 mA
= −10 mA
= −50 mA
= −100 mA
e
c
= 0; V
= 0; V
CB
EB
3
CONDITIONS
= −30 V
= −6 V
CB
EB
B
B
B
B
note 1
CE
= −5 V; f = 1 MHz
= −500 mV;
CE
= −1 mA
= −5 mA
= −1 mA
= −5 mA
Bon
= −20 V;
CONDITIONS
= −5 V;
= −1 mA;
−
−
60
80
100
60
30
−
−
−
−
−
−
250
−
−
−
−
−
MIN.
VALUE
500
−50
−50
−
−
300
−
−
−250
−400
−850
−950
4.5
10
−
4
35
35
225
75
MMBT3906
MAX.
Product data sheet
UNIT
K/W
nA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
ns
ns
ns
ns
UNIT