MMBT3906SL Fairchild Semiconductor, MMBT3906SL Datasheet - Page 2

• Manufacturer Part Number: MMBT3906SL
• Description: TRANS GP PNP 40V 200MA SOT-923F
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT3906SL

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 227mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-923F
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 227 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT3906SL; MMBT3906SLTR

© 2007 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.0.0
Typical Performance Characteristics
Figure 1. DC Current Gain
Figure 3. Base- Emitter Saturation Voltage
Figure 5. Collector- Base Capacitance
1000
100
100
10
12
11
9
8
6
10
1
0
Base- Collector Reverse Voltage, V
T
T
J
J
=25
=25
T
J
=-25
Collector Current, [mA]
Collector Current, [mA]
o
o
C
C
o
10
C
T
J
=-25
T
J
=125
5
o
C
T
J
o
=75
C
T
J
o
=125
C
T
o
C
f=1mhz
J
100
=75
100
cb
[V]
Vce=1V
o
C
Ic=10*Ib
10
2
Figure 2. Collector-Emitter Saturation Voltage
Figure 4. Collector- Base Leakage Current
Figure 6. Power Derating
100
1000
300
250
200
150
100
10
100
50
1
0
10
0
10
25
Base-Collector Revere Voltage, [V]
Ambient Temperature, T
Collector Current, [mA]
50
20
T
J
75
=75
T
J
=125
o
C
100
o
C
30
a
[
o
C]
T
T
J
T
T
J
T
=-25
=125
J
J
J
=75
=25
=-25
125
100
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o
T
C
o
o
o
Ic=10*Ib
C
C
C
o
J
C
=25
150
o
C
40