MMBT2222AT Fairchild Semiconductor, MMBT2222AT Datasheet
MMBT2222AT
Manufacturer Part Number
MMBT2222AT
Description
TRANS NPN EPIT 40V 600MA SOT523F
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT2222AT.pdf
(5 pages)
Specifications of MMBT2222AT
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 1V
Power - Max
250mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-523F
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.6 A
Power Dissipation
250 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
75V
Emitter-base Voltage
6V
Collector Current (dc) (max)
600mA
Dc Current Gain (min)
35
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-523F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT2222AT
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© 2007 Fairchild Semiconductor Corporation
MMBT2222AT Rev. 1.0.0
MMBT2222AT
NPN Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor.
• Ultra-Small Surface Mount Package for all types.
•
Absolute Maximum Ratings
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
* Minimum land pad.
Electrical Characteristics*
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
V
V
V
I
T
T
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
P
R
BV
BV
BV
I
h
V
V
f
C
C
t
t
t
t
C
CEX
T
d
r
s
f
FE
J
STG
CBO
CEO
EBO
C
CE
BE
Symbol
Symbol
θJA
ob
ib
General purpose switching & amplification application
Symbol
CBO
CEO
EBO
(sat)
(sat)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
Collector Power Dissipation, by R
Thermal Resistance, Junction to Ambient
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
Parameter
Parameter
T
a
=25°C unless otherwise noted
T
a
=25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
θJA
I
I
I
V
V
V
V
V
I
I
I
I
V
V
V
V
I
C
C
E
C
C
C
C
B1
CE
CE
CE
CE
CE
CE
CB
EB
CC
= 10μA, I
= 10μA, I
= 1mA, I
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
=- I
= 0.5V, I
= 60V, V
= 1V, I
= 1V, I
= 1V, I
= 1V, I
= 20V, I
= 10V, I
= 30V, I
B2
1
Test Condition
= 15mA
B
C
C
C
C
E
C
C
E
C
= 0
= 0.1mA
= 1mA
= 10mA
= 150mA
C
EB(OFF)
= 0
= 0
B
B
B
B
= 0, f = 1MHz
= 20mA, f = 100MHz
= 150mA
= 0, f = 1MHz
= 15mA
= 50mA
= 15mA
= 50mA
= 3V
-55 ~ 150
Value
Max
600
150
250
500
75
40
6
Min.
100
300
0.6
75
40
35
50
75
6
Max.
225
0.3
1.0
1.2
2.0
10
30
10
25
60
C
8
September 2008
Marking : A02
SOT-523F
www.fairchildsemi.com
Unit
Unit
°C/W
mW
mA
°C
°C
V
V
V
B
Unit
MHz
nA
pF
pF
ns
ns
ns
ns
V
V
V
V
V
V
V
E
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MMBT2222AT Summary of contents
Page 1
... Rise Time r t Storage Time s t Fall Time Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2% © 2007 Fairchild Semiconductor Corporation MMBT2222AT Rev. 1.0 25°C unless otherwise noted a T =25°C unless otherwise noted a θJA T =25°C unless otherwise noted ...
Page 2
... Collector Current, [mA] Figure 5. Collector- Base Leakage Current 1000 o T =125 C J 100 T = Base-Collector Revere Voltage, [V] © 2007 Fairchild Semiconductor Corporation MMBT2222AT Rev. 1.0.0 Figure 2. DC Current Gain Vce=10V 100 100 1000 Figure 4. Base-Emitter Saturation voltage Ic=10* =125 C 1000 = =25 C ...
Page 3
... Typical Performance Characteristics Figure 7. Power Derating 300 250 200 150 100 Ambient Temperature, T © 2007 Fairchild Semiconductor Corporation MMBT2222AT Rev. 1.0.0 100 125 150 www.fairchildsemi.com ...
Page 4
... Case Material(Molded Plastic): KTMC1060SC • UL Flammability classification rating : “V0” • Moisture Sensitivity level per JESD22-A1113B : MSL 1 • Lead terminals solderable per MIL-STD7502026 /JESD22A121 • Lead Free Plating : Pure Tin(Matte) © 2007 Fairchild Semiconductor Corporation MMBT2222AT Rev. 1.0.0 SOT-523F 4 Dimensions in Millimeters www.fairchildsemi.com ...
Page 5
... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation MMBT2222AT Rev. 1.0.0 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...