NSBA114EDXV6T1G ON Semiconductor, NSBA114EDXV6T1G Datasheet - Page 9

• Manufacturer Part Number: NSBA114EDXV6T1G
• Description: TRANS BRT PNP DUAL 50V SOT-563
• Manufacturer: ON Semiconductor

Specifications of NSBA114EDXV6T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: NSBA114EDXV6T1G; NSBA114EDXV6T1GOSTR

1.2
1.0
0.8
0.6
0.4
0.2
0.01
0
0.1
0
1
0
Figure 24. Maximum Collector Voltage versus
V
10
R
1
Figure 26. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA115EDXV6T1
20
2
Collector Current
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
3
30
100
10
1
0
Figure 28. Input Voltage versus Output Current
4
−25°C
25°C
40
75°C
2
f = 1 MHz
I
T
5
E
A
4
I
25°C
C
= 0 V
= 25°C
, COLLECTOR CURRENT (mA)
50
I
C
/I
6
B
http://onsemi.com
6
= 10
75°C
T
A
8
= −25°C
60
7
9
10
1000
100
12
100
0.1
10
10
1
1
0
1
Figure 27. Output Current versus Input Voltage
V
14
O
= 0.2 V
1
16
2
Figure 25. DC Current Gain
I
C
V
18
, COLLECTOR CURRENT (mA)
in
T
, INPUT VOLTAGE (VOLTS)
3
A
75°C
= −25°C
20
25°C
4
5
10
25°C
6
T
V
A
7
O
V
75°C
= −25°C
CE
= 5 V
= 10 V
8
9
100
10