NSBA114EDXV6T1G ON Semiconductor, NSBA114EDXV6T1G Datasheet - Page 8

• Manufacturer Part Number: NSBA114EDXV6T1G
• Description: TRANS BRT PNP DUAL 50V SOT-563
• Manufacturer: ON Semiconductor

Specifications of NSBA114EDXV6T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: NSBA114EDXV6T1G; NSBA114EDXV6T1GOSTR

TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114TDXV6T1
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA143TDXV6T1
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
1000
1000
100
100
1.0
1.0
Figure 22. DC Current Gain
Figure 23. DC Current Gain
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
http://onsemi.com
10
10
8
V
CE
= 5.0 V
V
CE
T
V
T
= 5.0 V
A
CE
A
V
= 25°C
= 25°C
CE
= 10 V
= 10 V
100
100