NSBA114EDXV6T1G ON Semiconductor, NSBA114EDXV6T1G Datasheet - Page 2

• Manufacturer Part Number: NSBA114EDXV6T1G
• Description: TRANS BRT PNP DUAL 50V SOT-563
• Manufacturer: ON Semiconductor

Specifications of NSBA114EDXV6T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: NSBA114EDXV6T1G; NSBA114EDXV6T1GOSTR

*The “G’’ suffix indicates Pb−Free package available. Refer to Ordering Information Table on page 1.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
DEVICE MARKING AND RESISTOR VALUES
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
NSBA114EDXV6T1 / T5
NSBA124EDXV6T1 / T5
NSBA144EDXV6T1 / T5
NSBA114YDXV6T1 / T5
NSBA114TDXV6T1 / T5
NSBA143TDXV6T1 / T5
NSBA113EDXV6T1 / T5
NSBA123EDXV6T1 / T5
NSBA143EDXV6T1 / T5
NSBA143ZDXV6T1 / T5
NSBA124XDXV6T1 / T5
NSBA123JDXV6T1 / T5
NSBA115EDXV6T1 / T5
NSBA144WDXV6T1
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current
(V
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage (Note 3) (I
Collector-Emitter Saturation Voltage (I
(I
(I
C
C
EB
= −10 mA, I
= −10 mA, I
= −6.0 V, I
NSBA143EDXV6T1/NSBA143ZDXV6T1/NSBA124XDXV6T1
B
B
C
= −5 mA)
= −1 mA)
= 0)
Device*
Characteristic
NSBA113EDXV6T1/NSBA123EDXV6T1
NSBA114TDXV6T1/NSBA143TDXV6T1
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
CB
CE
= −50 V, I
C
= −50 V, I
C
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
= −10 mA, I
= −10 mA, I
(T
A
= 25°C unless otherwise noted, common for Q
E
= 0)
B
C
= 0)
= −2.0 mA, I
NSBA144WDXV6T1
E
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA124XDXV6T1
NSBA114EDXV6T1
NSBA114YDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA143ZDXV6T1
NSBA115EDXV6T1
NSBA114TDXV6T1
NSBA123JDXV6T1
E
= 0)
= −0.3 mA)
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
Package
http://onsemi.com
B
= 0)
2
V
V
Marking
Symbol
V
(BR)CBO
(BR)CEO
I
I
I
CE(sat)
0M
CBO
CEO
EBO
0A
0B
0C
0D
0E
0G
0H
0K
0N
0P
0F
0L
0J
1
and Q
Min
−50
−50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2
R1 (kW)
)
100
4.7
1.0
2.2
4.7
4.7
2.2
10
22
47
10
10
22
47
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.18
−0.13
−0.05
−0.13
−0.25
−100
−500
Max
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.2
−
−
R2 (kW)
100
1.0
2.2
4.7
10
22
47
47
47
47
47
22
∞
∞
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc