NSBA114EDXV6T1G ON Semiconductor, NSBA114EDXV6T1G Datasheet - Page 4

• Manufacturer Part Number: NSBA114EDXV6T1G
• Description: TRANS BRT PNP DUAL 50V SOT-563
• Manufacturer: ON Semiconductor

Specifications of NSBA114EDXV6T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: NSBA114EDXV6T1G; NSBA114EDXV6T1GOSTR

0.001
1000
0.01
100
100
0.1
300
250
200
150
100
10
10
50
1
0
1
−50
0
Figure 5. Output Current versus Input Voltage
ALL NSBA114EDXV6T1 SERIES DEVICES
Figure 1. Derating Curve − ALL DEVICES
1
75°C
2
T
A
Figure 3. DC Current Gain
, AMBIENT TEMPERATURE (°C)
I
0
C
V
, COLLECTOR CURRENT (mA)
in
T
3
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1
R
, INPUT VOLTAGE (VOLTS)
A
25°C
qJA
= −25°C
4
= 490°C/W
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
10
50
5
6
V
O
7
= 5 V
100
8
V
T
CE
A
= 75°C
= 10 V
http://onsemi.com
9
−25°C
25°C
100
10
150
4
100
0.1
10
0.01
1
4
3
2
1
0
0.1
0
0
1
Figure 6. Input Voltage versus Output Current
TYPICAL ELECTRICAL CHARACTERISTICS
0
V
O
I
= 0.2 V
C
/I
B
= 10
10
10
Figure 4. Output Capacitance
V
R
I
, REVERSE BIAS VOLTAGE (VOLTS)
C
Figure 2. V
, COLLECTOR CURRENT (mA)
20
— NSBA114EDXV6T1
I
C
, COLLECTOR CURRENT (mA)
20
20
CE(sat)
T
30
30
A
T
versus I
= −25°C
A
75°C
75°C
= −25°C
f = 1 MHz
l
T
40
E
C
40
A
25°C
40
= 0 V
= 25°C
25°C
50
50
50