PBLS2002S,115 NXP Semiconductors, PBLS2002S,115 Datasheet - Page 11

• Manufacturer Part Number: PBLS2002S,115
• Description: LOADSWITCH PNP 20V 3A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBLS2002S,115

• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 3A
• Voltage - Collector Emitter Breakdown (max): 50V, 20V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
• Current - Collector Cutoff (max): 1µA, 100nA
• Frequency - Transition: 100MHz
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Configuration: Dual Dual Collector
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 4.7 KOhms at NPN
• Typical Resistor Ratio: 1 at NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V at NPN, 20 V at PNP
• Peak Dc Collector Current: 100 mA at NPN, 3000 mA at PNP
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060278115; PBLS2002S T/R; PBLS2002S T/R

NXP Semiconductors
8. Test information
PBLS2002S_2
Product data sheet
Fig 17. BISS transistor switching time definition
Fig 18. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
B
C
I
C
= 2 A; I
oscilloscope
t
d
Bon
t
on
= 100 mA; I
Rev. 02 — 24 August 2009
V
t
I
r
(probe)
450
Boff
R1
= 100 mA; R1 = open; R2 = 25 ; R
R2
R
B
V
BB
R
C
V
CC
DUT
V
o
mgd624
(probe)
I
450
Bon
t
s
I
(100 %)
Boff
t
20 V PNP BISS loadswitch
off
B
oscilloscope
PBLS2002S
= 70 ; R
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
t
C
f
= 5
I
006aaa266
C
(100 %)
11 of 16
t