PUMD48,115 NXP Semiconductors, PUMD48,115 Datasheet

TRANS NPN/PNP 50V 100MA SOT363

PUMD48,115

Manufacturer Part Number
PUMD48,115
Description
TRANS NPN/PNP 50V 100MA SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMD48,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K, 2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 5V / 100 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
47 KOhm or 2.2 KOhm
Typical Resistor Ratio
1 or 0.05
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055444115
PUMD48 T/R
PUMD48 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PUMD48,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
NPN/PNP double Resistor-Equipped Transistors (RET) in small Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Table 2.
Type number
PEMD48
PUMD48
Symbol
Per transistor; for the PNP transistor with negative polarity
V
I
Transistor TR1 (NPN)
R1
R2/R1
Transistor TR2 (PNP)
R1
R2/R1
O
CEO
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ
Rev. 05 — 13 April 2010
Built-in bias resistors
Simplifies circuit design
Low current peripheral driver
Replacement of general-purpose transistors in digital applications
Control IC inputs
Product overview
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
bias resistor 1 (input)
bias resistor ratio
Package
NXP
SOT666
SOT363
Conditions
open base
JEITA
-
SC-88
Reduces component count
Reduces pick and place costs
Min
-
-
33
0.8
1.54
17
Typ
-
-
47
2.2
1
21
Product data sheet
Package
configuration
ultra small and flat lead
very small
Max
50
100
61
1.2
2.86
26
V
mA
Unit

Related parts for PUMD48,115

PUMD48,115 Summary of contents

Page 1

PEMD48; PUMD48 NPN/PNP resistor-equipped transistors kΩ kΩ and R1 = 2.2 kΩ kΩ Rev. 05 — 13 April 2010 1. Product profile 1.1 General description NPN/PNP double Resistor-Equipped Transistors (RET) in ...

Page 2

... NXP Semiconductors 2. Pinning information Table 3. Pin PEMD48 (SOT666 PUMD48 (SOT363 Ordering information Table 4. Type number Package PEMD48 PUMD48 4. Marking Table 5. Type number PEMD48 PUMD48 [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PEMD48_PUMD48_5 Product data sheet Pinning Description GND (emitter) TR1 ...

Page 3

... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor; for the PNP transistor with negative polarity V CBO V CEO V EBO tot Per device P tot amb T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol Per transistor R th(j-a) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. PEMD48_PUMD48_5 Product data sheet Thermal characteristics Parameter Conditions thermal resistance from ...

Page 5

... NXP Semiconductors 7. Characteristics Table amb Symbol Per transistor; for the PNP transistor with negative polarity I CBO I CEO Transistor TR1 (NPN) I EBO CEsat V I(off) V I(on) R1 R2/ Transistor TR2 (PNP) I EBO CEsat V I(off) V I(on) R1 R2/ PEMD48_PUMD48_5 Product data sheet Characteristics ° C unless otherwise specified. ...

Page 6

... NXP Semiconductors − 150 °C (1) T amb = 25 °C (2) T amb = −40 °C (3) T amb Fig 1. TR1 (NPN): DC current gain as a function of collector current; typical values I(on) (V) 10 (1) 1 (3) (2) −1 10 − 0 −40 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 3 ...

Page 7

... NXP Semiconductors −1 −10 −1 = − 150 °C (1) T amb = 25 °C (2) T amb = −40 °C (3) T amb Fig 5. TR2 (PNP): DC current gain as a function of collector current; typical values − I(on) (mV) −10 3 (1) (2) (3) −10 2 −1 −10 −1 = −0 −40 °C (1) T amb = 25 ° ...

Page 8

... NXP Semiconductors 8. Package outline 1.7 1 1.7 1.3 1.5 1.1 pin 1 index 1 2 0.5 1 Dimensions in mm Fig 9. Package outline PEMD48 (SOT666) 9. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PEMD48 PUMD48 [1] For further information and the availability of packing methods, see ...

Page 9

... Document ID Release date PEMD48_PUMD48_5 20100413 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section 1 “Product • Table 3 • ...

Page 10

... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...

Page 11

... NXP Semiconductors 12. Contact information For more information, please visit: For sales office addresses, please send an email to: PEMD48_PUMD48_5 Product data sheet http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 05 — 13 April 2010 PEMD48; PUMD48 NPN/PNP resistor-equipped transistors © NXP B.V. 2010. All rights reserved. ...

Page 12

... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Packing information . . . . . . . . . . . . . . . . . . . . . 8 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Legal information ...

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