NST3946DXV6T1G ON Semiconductor, NST3946DXV6T1G Datasheet - Page 8

• Manufacturer Part Number: NST3946DXV6T1G
• Description: TRANS NPN/PNP 200MA 40V SOT-563
• Manufacturer: ON Semiconductor

Specifications of NST3946DXV6T1G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 500mW
• Frequency - Transition: 300MHz, 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NST3946DXV6T1G; NST3946DXV6T1GOSTR

+0.5 V
10.6 V
500
300
200
100
70
50
30
20
10
7
5
1.0
2.0 3.0
< 1 ns
Figure 18. Delay and Rise Time
DUTY CYCLE = 2%
Figure 21. Turn −On Time
Equivalent Test Circuit
I
C
300 ns
, COLLECTOR CURRENT (mA)
5.0 7.0
(PNP)
10
10 k
t
7.0
5.0
3.0
2.0
1.0
d
10
@ V
0.1
20
TYPICAL TRANSIENT CHARACTERISTICS
OB
= 0 V
30
0.2 0.3 0.5 0.7
t
r
* Total shunt capacitance of test jig and connectors
@ V
3 V
50
CC
= 3.0 V
70
275
I
C
Figure 20. Capacitance
C
/I
100
s
B
< 4 pF*
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REVERSE BIAS (VOLTS)
= 10
15 V
2.0 V
40 V
1.0
C
200
C
obo
(PNP)
ibo
DUTY CYCLE = 2%
2.0 3.0
8
T
T
10 < t
J
J
= 25°C
= 125°C
(PNP)
1
500
300
200
100
70
50
30
20
10
< 500 ms
7
5
5.0 7.0 10
1.0
+9.1 V
0
2.0 3.0
t
1
20 30 40
Figure 19. Storage and Fall Time
I
C
10.9 V
, COLLECTOR CURRENT (mA)
5.0 7.0
Figure 22. Fall Time
< 1 ns
Equivalent Test Circuit
(PNP)
10
I
1N916
C
10 k
/I
B
= 10
20
I
C
/I
B
30
= 20
50
3 V
V
I
70
B1
CC
= I
100
= 40 V
275
B2
C
s
< 4 pF*
200