NST3946DXV6T1G ON Semiconductor, NST3946DXV6T1G Datasheet - Page 3
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NST3946DXV6T1G
Manufacturer Part Number
NST3946DXV6T1G
Description
TRANS NPN/PNP 200MA 40V SOT-563
Manufacturer
ON Semiconductor
Datasheet
1.NST3946DXV6T5G.pdf
(11 pages)
Specifications of NST3946DXV6T1G
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
500mW
Frequency - Transition
300MHz, 250MHz
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
NST3946DXV6T1G
NST3946DXV6T1GOSTR
NST3946DXV6T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NST3946DXV6T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NST3946DXV6T1G
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small −Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
(I
(I
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
C
C
CB
CB
EB
EB
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
= 10 mAdc, V
= −10 mAdc, V
= 5.0 Vdc, I
= −5.0 Vdc, I
= 0.5 Vdc, I
= −0.5 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 5.0 Vdc, I
= −5.0 Vdc, I
C
C
C
C
C
CE
E
C
C
C
C
C
CE
E
C
C
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 100 mAdc, R
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 20 Vdc, f = 100 MHz)
= −100 mAdc, R
= −20 Vdc, f = 100 MHz)
(V
(V
(I
(I
(V
(V
(I
(I
C
C
B1
B1
CC
CC
CC
CC
= 10 mAdc, I
= −10 mAdc, I
= I
= I
= 3.0 Vdc, V
= −3.0 Vdc, V
= 3.0 Vdc, I
= −3.0 Vdc, I
B2
B2
= 1.0 mAdc)
= −1.0 mAdc)
Characteristic
S
= 1.0 k Ω, f = 1.0 kHz)
S
B1
= 1.0 k Ω, f = 1.0 kHz)
C
(T
B1
BE
C
= 1.0 mAdc)
= 10 mAdc)
A
BE
= −1.0 mAdc)
= −10 mAdc)
= 25°C unless otherwise noted) (Continued)
= − 0.5 Vdc)
= 0.5 Vdc)
http://onsemi.com
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
3
Symbol
C
C
h
h
h
h
NF
f
obo
ibo
oe
T
re
ie
fe
t
t
t
t
d
s
r
f
Min
300
250
100
100
1.0
2.0
0.5
0.1
1.0
3.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
10.0
400
400
4.0
4.5
8.0
8.0
5.0
4.0
200
225
10
12
10
40
60
35
35
35
35
50
75
−
−
X 10
mmhos
Unit
MHz
k Ω
dB
ns
ns
pF
pF
−
− 4