NST3946DXV6T1G ON Semiconductor, NST3946DXV6T1G Datasheet - Page 2

• Manufacturer Part Number: NST3946DXV6T1G
• Description: TRANS NPN/PNP 200MA 40V SOT-563
• Manufacturer: ON Semiconductor

Specifications of NST3946DXV6T1G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 500mW
• Frequency - Transition: 300MHz, 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NST3946DXV6T1G; NST3946DXV6T1GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
2. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%.
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature Range
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
(I
(I
(I
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
E
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CE
CE
CE
CE
= 10 mAdc, I
= −10 mAdc, I
= 1.0 mAdc, I
= −1.0 mAdc, I
= 10 mAdc, I
= −10 mAdc, I
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 50 mAdc, V
= 100 mAdc, V
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −50 mAdc, V
= −100 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= 30 Vdc, V
= −30 Vdc, V
= 30 Vdc, V
= −30 Vdc, V
C
E
B
B
B
B
B
E
C
CE
CE
EB
EB
= 0)
= 0)
B
B
B
B
CE
CE
B
= 1.0 mAdc)
= 5.0 mAdc)
= 1.0 mAdc)
= 5.0 mAdc)
CE
CE
CE
= 0)
= 0)
= 0)
EB
EB
CE
CE
= −1.0 mAdc)
= −5.0 mAdc)
= −1.0 mAdc)
= −5.0 mAdc)
CE
= 0)
= 1.0 Vdc)
= 1.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −3.0 Vdc)
= −3.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
(Note 2)
Characteristic
(Both Junctions Heated)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
I
BE(sat)
h
CEX
I
BL
FE
Symbol
T
R
J
, T
−0.65
qJA
−5.0
0.65
Min
−40
−40
100
100
6.0
40
60
40
70
60
30
60
80
60
30
stg
−
−
−
−
−
−
−
−
−
−
(Note 1)
−55 to
−0.25
−0.85
−0.95
+150
Max
Max
−0.4
0.85
0.95
250
−50
−50
300
300
0.2
0.3
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
°C/W
nAdc
nAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
°C
−