PEMZ7,115 NXP Semiconductors, PEMZ7,115 Datasheet - Page 5
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PEMZ7,115
Manufacturer Part Number
PEMZ7,115
Description
TRANS NPN/PNP 12V 500MA SOT666
Manufacturer
NXP Semiconductors
Datasheet
1.PEMZ7115.pdf
(9 pages)
Specifications of PEMZ7,115
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
220mV @ 10mA, 200mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 10mA, 2V
Power - Max
300mW
Frequency - Transition
420MHz, 280MHz
Mounting Type
Surface Mount
Package / Case
SS Mini-6 (SOT-666)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
934056714115
PEMZ7 T/R
PEMZ7 T/R
PEMZ7 T/R
PEMZ7 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PEMZ7,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
2001 Nov 07
handbook, halfpage
handbook, halfpage
NPN/PNP general purpose transistors
V CEsat
TR1 (NPN); V
(1) T
(2) T
(3) T
Fig.4
TR1 (NPN); I
(1) T
(2) T
(3) T
Fig.6
(mV)
(mV)
V BE
1200
1000
800
600
400
200
10
10
10
amb
amb
amb
amb
amb
amb
10
1
3
2
10
−1
−1
= −55 °C.
= 25 °C.
= 150 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Base-emitter voltage as a function of
collector current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
C
CE
/I
B
= 2 V.
= 20.
1
1
10
10
(1)
(2)
(3)
(1)
(2)
(3)
10
10
2
2
I C (mA)
I C (mA)
MHC018
MLD673
10
10
3
3
5
handbook, halfpage
handbook, halfpage
V BEsat
(mV)
TR1 (NPN); I
(1) T
(2) T
(3) T
Fig.5
TR2 (PNP); V
(1) T
(2) T
(3) T
Fig.7
h FE
1200
1000
800
600
400
200
600
500
400
300
200
100
−10
amb
amb
amb
amb
amb
amb
10
0
−1
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Base-emitter saturation voltage as a
function of collector current; typical values.
DC current gain as a function of collector
current; typical values.
C
CE
/I
B
= −2 V.
= 20.
−1
1
(1)
(2)
(3)
(1)
(2)
(3)
−10
10
−10
10
Product data sheet
2
2
I C (mA)
I C (mA)
MHC017
MHC019
PEMZ7
−10
10
3
3