PEMZ7,115 NXP Semiconductors, PEMZ7,115 Datasheet - Page 3
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PEMZ7,115
Manufacturer Part Number
PEMZ7,115
Description
TRANS NPN/PNP 12V 500MA SOT666
Manufacturer
NXP Semiconductors
Datasheet
1.PEMZ7115.pdf
(9 pages)
Specifications of PEMZ7,115
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
220mV @ 10mA, 200mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 10mA, 2V
Power - Max
300mW
Frequency - Transition
420MHz, 280MHz
Mounting Type
Surface Mount
Package / Case
SS Mini-6 (SOT-666)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
934056714115
PEMZ7 T/R
PEMZ7 T/R
PEMZ7 T/R
PEMZ7 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PEMZ7,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Nov 07
Per transistor; for the PNP transistor with negative polarity
V
V
V
I
I
I
P
T
T
T
Per device
P
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
tot
NPN/PNP general purpose transistors
th j-a
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
thermal resistance from junction to
ambient
PARAMETER
PARAMETER
open emitter
open base
open collector
T
T
notes 1 and 2
amb
amb
≤ 25 °C; note 1
≤ 25 °C; note 1
3
CONDITIONS
CONDITIONS
−
−
−
−
−
−
−
−65
−
−65
−
MIN.
VALUE
416
15
12
6
500
1
100
200
+150
150
+150
300
MAX.
Product data sheet
PEMZ7
UNIT
K/W
V
V
V
mA
A
mA
mW
°C
°C
°C
mW
UNIT