PEMZ7 T/R NXP Semiconductors, PEMZ7 T/R Datasheet

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PEMZ7 T/R

Manufacturer Part Number
PEMZ7 T/R
Description
Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PEMZ7 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN/PNP
Collector- Base Voltage Vcbo
15 V
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
420 MHz
Dc Collector/base Gain Hfe Min
200 at 10 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-666
Continuous Collector Current
0.5 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
PEMZ7,115
Product data sheet
Supersedes data of 2001 Sep 25
DATA SHEET
PEMZ7
NPN/PNP general purpose
transistors
DISCRETE SEMICONDUCTORS
M3D744
2001 Nov 07

Related parts for PEMZ7 T/R

PEMZ7 T/R Summary of contents

Page 1

... DATA SHEET PEMZ7 NPN/PNP general purpose transistors Product data sheet Supersedes data of 2001 Sep 25 DISCRETE SEMICONDUCTORS M3D744 2001 Nov 07 ...

Page 2

... NXP Semiconductors NPN/PNP general purpose transistors FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Low collector capacitance • Low V CEsat • High current capabilities • Improved thermal behaviour due to flat leads • ...

Page 3

... NXP Semiconductors NPN/PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor; for the PNP transistor with negative polarity V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current ...

Page 4

... NXP Semiconductors NPN/PNP general purpose transistors CHARACTERISTICS = 25 °C; unless otherwise specified. T amb SYMBOL PARAMETER Per transistor; for the PNP transistor with negative polarity I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage f transition frequency ...

Page 5

... NXP Semiconductors NPN/PNP general purpose transistors 1200 handbook, halfpage V BE (mV) 1000 (1) 800 (2) 600 (3) 400 200 − TR1 (NPN −55 °C. (1) T amb = 25 °C. (2) T amb = 150 °C. (3) T amb Fig.4 Base-emitter voltage as a function of collector current; typical values. ...

Page 6

... NXP Semiconductors NPN/PNP general purpose transistors −1200 handbook, halfpage ( (mA) −800 −400 0 −2 − °C. TR2 (PNP); T amb ( 7 6 5 4 Fig.8 Collector current as a function of collector-emitter voltage ...

Page 7

... NXP Semiconductors NPN/PNP general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2001 Nov scale ...

Page 8

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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