PBSS4140DPN,115 NXP Semiconductors, PBSS4140DPN,115 Datasheet - Page 6
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PBSS4140DPN,115
Manufacturer Part Number
PBSS4140DPN,115
Description
TRANS NPN/PNP 40V 1A SOT457
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS4140DPN115.pdf
(11 pages)
Specifications of PBSS4140DPN,115
Package / Case
SC-74-6
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 500mA, 5V
Power - Max
600mW
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
370 mW
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4153-2
934056660115
PBSS4140DPN T/R
PBSS4140DPN T/R
934056660115
PBSS4140DPN T/R
PBSS4140DPN T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS4140DPN,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
2001 Dec 13
handbook, halfpage
40 V low V
TR1 (NPN); V
Fig.6
(MHz)
400
f T
300
200
100
0
0
Transition frequency as a function of
collector current; typical values.
CE
200
= 10 V.
CEsat
400
NPN/PNP transistor
600
800
I C (mA)
MLD637
1000
6
PBSS4140DPN
Product data sheet