PBSS4140DPN,115 NXP Semiconductors, PBSS4140DPN,115 Datasheet
PBSS4140DPN,115
Specifications of PBSS4140DPN,115
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PBSS4140DPN T/R
PBSS4140DPN T/R
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PBSS4140DPN,115 Summary of contents
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DATA SHEET dbook, halfpage PBSS4140DPN 40 V low V transistor Product data sheet DISCRETE SEMICONDUCTORS M3D302 NPN/PNP CEsat 2001 Dec 13 ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat FEATURES • 600 mW total power dissipation • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replaces two SOT23 packaged low V on same PCB area • Reduces required PCB area • ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor; for the PNP transistor with negative polarity V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC) ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Per transistor unless otherwise specified; for the PNP transistor with negative polarity I collector-base cut-off current CBO I collector-emitter cut-off current CEO I emitter-base cut-off current EBO h DC current gain ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat 1000 handbook, halfpage h FE 800 600 400 200 0 − TR1 (NPN 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values handbook, halfpage V CEsat ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat 400 handbook, halfpage f T (MHz) 300 200 100 0 0 200 400 600 TR1 (NPN Fig.6 Transition frequency as a function of collector current; typical values. 2001 Dec 13 MLD637 800 1000 I C (mA) 6 Product data sheet PBSS4140DPN ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat 1200 handbook, halfpage h FE 800 400 0 −1 − − − −5 V. TR2 (PNP 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.7 DC current gain as a function of collector current; typical values. −10 ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat 300 handbook, halfpage f T (MHz) 200 100 0 −200 −400 −600 0 TR2 (PNP - Fig.11 Transition frequency as a function of collector current; typical values. 2001 Dec 13 MLD641 −800 − 1000 I C (mA) 8 Product data sheet PBSS4140DPN ...
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... NXP Semiconductors 40 V low V NPN/PNP transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index 1 e DIMENSIONS (mm are the original dimensions) UNIT 0.1 1.1 0.40 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT457 2001 Dec scale 3.1 1.7 3.0 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...