PBSS4140DPN,115 NXP Semiconductors, PBSS4140DPN,115 Datasheet - Page 3
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PBSS4140DPN,115
Manufacturer Part Number
PBSS4140DPN,115
Description
TRANS NPN/PNP 40V 1A SOT457
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS4140DPN115.pdf
(11 pages)
Specifications of PBSS4140DPN,115
Package / Case
SC-74-6
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 500mA, 5V
Power - Max
600mW
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
370 mW
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4153-2
934056660115
PBSS4140DPN T/R
PBSS4140DPN T/R
934056660115
PBSS4140DPN T/R
PBSS4140DPN T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS4140DPN,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
2001 Dec 13
Per transistor; for the PNP transistor with negative polarity
V
V
V
I
I
I
P
T
T
T
Per device
P
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
tot
40 V low V
th j-a
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
thermal resistance from junction to
ambient
CEsat
PARAMETER
PARAMETER
NPN/PNP transistor
open emitter
open base
open collector
T
T
in free air; note 1
amb
amb
≤ 25 °C; note 1
≤ 25 °C; note 1
3
CONDITIONS
CONDITIONS
−
−
−
−
−
−
−
−65
−
−65
−
MIN.
VALUE
208
PBSS4140DPN
40
40
5
1
2
1
370
+150
150
+150
600
MAX.
Product data sheet
UNIT
2
2
K/W
V
V
V
A
A
A
mW
°C
°C
°C
mW
.
.
UNIT