PBSS4160DPN,115 NXP Semiconductors, PBSS4160DPN,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS4160DPN,115
• Description: TRANS NPN/PNP 60V LOW SAT SC-74
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160DPN,115

• Package / Case: SC-74-6
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 870mA, 770mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A / 330mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V / 150 @ 500mA, 5V
• Power - Max: 420mW
• Frequency - Transition: 220MHz, 185MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: +/- 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A, - 900 mA
• Maximum Dc Collector Current: +/- 2 A
• Power Dissipation: 290 mW
• Maximum Operating Frequency: 220 MHz, 185 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4352-2; 934058119115; PBSS4160DPN T/R; PBSS4160DPN T/R

NXP Semiconductors
PBSS4160DPN_3
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
P
Per device
P
T
T
T
Fig 1.
j
amb
stg
tot
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Power derating curves
Parameter
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Limiting values
(mW)
Rev. 03 — 11 December 2009
P
tot
800
600
400
200
2
O
0
3
, standard footprint
0
…continued
(1)
(2)
(3)
40
2
O
Conditions
T
T
3
, standard footprint.
amb
amb
60 V, 1 A NPN/PNP low V
≤ 25 °C
≤ 25 °C
2
80
120
T
amb
006aaa493
PBSS4160DPN
(°C)
[1]
[2]
[3]
[1]
[2]
[3]
160
Min
-
-
-
-
-
-
-
−65
−65
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
290
370
450
420
560
700
150
+150
+150
Unit
mW
mW
mW
mW
mW
mW
°C
°C
°C
2
.
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