PBSS4160DPN,115 NXP Semiconductors, PBSS4160DPN,115 Datasheet - Page 16

• Manufacturer Part Number: PBSS4160DPN,115
• Description: TRANS NPN/PNP 60V LOW SAT SC-74
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160DPN,115

• Package / Case: SC-74-6
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 870mA, 770mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A / 330mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V / 150 @ 500mA, 5V
• Power - Max: 420mW
• Frequency - Transition: 220MHz, 185MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: +/- 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A, - 900 mA
• Maximum Dc Collector Current: +/- 2 A
• Power Dissipation: 290 mW
• Maximum Operating Frequency: 220 MHz, 185 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4352-2; 934058119115; PBSS4160DPN T/R; PBSS4160DPN T/R

NXP Semiconductors
12. Revision history
Table 9.
PBSS4160DPN_3
Product data sheet
Document ID
PBSS4160DPN_3
Modifications:
PBSS4160DPN_2
PBSS4160DPN_1
Revision history
Release date
20091211
20050714
20040603
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure
1,
7
and 15: updated
Rev. 03 — 11 December 2009
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
60 V, 1 A NPN/PNP low V
Change notice
-
-
-
PBSS4160DPN
Supersedes
PBSS4160DPN_2
PBSS4160DPN_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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