PBSS4160DPN,115 NXP Semiconductors, PBSS4160DPN,115 Datasheet

TRANS NPN/PNP 60V LOW SAT SC-74

PBSS4160DPN,115

Manufacturer Part Number
PBSS4160DPN,115
Description
TRANS NPN/PNP 60V LOW SAT SC-74
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4160DPN,115

Package / Case
SC-74-6
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
870mA, 770mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
250mV @ 100mA, 1A / 330mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 500mA, 5V / 150 @ 500mA, 5V
Power - Max
420mW
Frequency - Transition
220MHz, 185MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 65
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
+/- 60 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A, - 900 mA
Maximum Dc Collector Current
+/- 2 A
Power Dissipation
290 mW
Maximum Operating Frequency
220 MHz, 185 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4352-2
934058119115
PBSS4160DPN T/R
PBSS4160DPN T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN/PNP low V
(SC-74) Surface Mounted Device (SMD) plastic package.
Table 1.
[1]
[2]
Symbol
TR1 (NPN)
V
I
I
R
TR2 (PNP)
V
I
I
R
C
CM
C
CM
CEO
CEO
CEsat
CEsat
PBSS4160DPN
60 V, 1 A NPN/PNP low V
Rev. 03 — 11 December 2009
Low collector-emitter saturation voltage V
High collector current capability: I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Complementary MOSFET driver
Half and full bridge motor drivers
Dual low power switches (e.g. motors, fans)
Automotive applications
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Pulse test: t
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
Quick reference data
p
≤ 300 μs; δ ≤ 0.02.
CEsat
Breakthrough in Small Signal (BISS) transistor pair in a SOT457
FE
) at high I
C
Conditions
open base
single pulse; t
I
open base
single pulse; t
I
C
C
CEsat
and I
= 1 A; I
= −1 A; I
CM
C
(BISS) transistor
CEsat
B
B
= 100 mA
= −100 mA
p
p
≤ 1 ms
≤ 1 ms
[1]
[2]
[1]
[2]
-
-
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
200
-
-
-
250
Max
60
1
2
250
−60
−900
−2
330
2
.
Unit
V
A
A
V
mA
A

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PBSS4160DPN,115 Summary of contents

Page 1

PBSS4160DPN NPN/PNP low V Rev. 03 — 11 December 2009 1. Product profile 1.1 General description NPN/PNP low V (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features Low collector-emitter saturation voltage V High collector current ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS4160DPN 4. Marking Table 4. Type number PBSS4160DPN 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor unless otherwise specified; for the PNP transistor with negative polarity ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol P tot Per device P tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on a ceramic PCB δ th(j-a) 0.75 (K/W) ...

Page 5

... NXP Semiconductors δ th(j-a) (K/W) 0.75 0. 0.33 0.20 0.10 0.05 10 0.02 0. −5 − FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values th(j-a) δ (K/W) 0.75 0. 0.33 0.20 0.10 0. ...

Page 6

... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Per transistor unless otherwise specified; for the PNP transistor with negative polarity I CBO I CES I EBO V BEsat V BEon TR1 (NPN CEsat R CEsat off TR2 (PNP PBSS4160DPN_3 Product data sheet NPN/PNP low V Characteristics C unless otherwise specified. ...

Page 7

... NXP Semiconductors Table 7. ° amb Symbol V CEsat R CEsat off [1] Pulse test: t PBSS4160DPN_3 Product data sheet NPN/PNP low V Characteristics …continued C unless otherwise specified. Parameter Conditions = −100 mA; collector-emitter saturation −1 mA voltage −500 mA − − − collector-emitter saturation I C resistance = −0.5 A; delay time −25 mA; ...

Page 8

... NXP Semiconductors 800 h FE (1) 600 (2) 400 (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. TR1 (NPN): DC current gain as a function of collector current; typical values 1 V CEsat (V) −1 10 (1) (2) (3) −2 10 − 100 °C (1) T amb = 25 ° ...

Page 9

... NXP Semiconductors 1.2 V BEsat (V) 1.0 (1) 0.8 (2) 0.6 (3) 0.4 0.2 − −55 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 9. TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values 2.0 I (mA (A) 52.0 1.6 39.0 26.0 1.2 13 ...

Page 10

... NXP Semiconductors 600 ( 400 (2) (3) 200 0 −1 −10 −1 −10 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 13. TR2 (PNP): DC current gain as a function of collector current; typical values −1 V CEsat (V) −1 −10 (1) (2) (3) −2 −10 − ...

Page 11

... NXP Semiconductors −1.1 V BEsat (V) −0.9 (1) −0.7 (2) −0.5 (3) −0.3 −0.1 −1 −10 −1 −10 − −55 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 17. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values −2.0 (mA) = −35 −31.5 C (A) − ...

Page 12

... NXP Semiconductors 8. Test information Fig 21. TR1 (NPN): BISS transistor switching time definition I Fig 22. TR1 (NPN): Test circuit for switching times PBSS4160DPN_3 Product data sheet NPN/PNP low (probe) oscilloscope 450 Ω −25 mA open 100 Ω 0 mA Bon Boff Rev. 03 — 11 December 2009 ...

Page 13

... NXP Semiconductors − − Fig 23. TR2 (PNP): BISS transistor switching time definition I Fig 24. TR2 (PNP): Test circuit for switching times PBSS4160DPN_3 Product data sheet NPN/PNP low (probe) oscilloscope 450 Ω −0 − open 100 Ω Bon Boff Rev. 03 — 11 December 2009 ...

Page 14

... NXP Semiconductors 9. Package outline Fig 25. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS4160DPN [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...

Page 15

... NXP Semiconductors 11. Soldering 3.30 Dimensions in mm Fig 26. Reflow soldering footprint 5.05 Dimensions in mm Fig 27. Wave soldering footprint PBSS4160DPN_3 Product data sheet NPN/PNP low V 3.45 1.95 0.95 2.825 1.60 1.70 3.10 3.20 5.30 1.40 4.30 Rev. 03 — 11 December 2009 PBSS4160DPN (BISS) transistor ...

Page 16

... Revision history Table 9. Revision history Document ID Release date PBSS4160DPN_3 20091211 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure PBSS4160DPN_2 20050714 PBSS4160DPN_1 20040603 ...

Page 17

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 18

... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 12 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 10 Packing information . . . . . . . . . . . . . . . . . . . . 14 11 Soldering ...

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