BT168E,112 NXP Semiconductors, BT168E,112 Datasheet - Page 5

• Manufacturer Part Number: BT168E,112
• Description: THYRISTOR .8A 500V TO-92
• Manufacturer: NXP Semiconductors

Specifications of BT168E,112

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 500V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• On-state Rms Current (it Rms): 0.8 A
• Forward Voltage Drop: 1.25 V
• Gate Trigger Voltage (vgt): 0.3 V
• Gate Trigger Current (igt): 50 uA
• Holding Current (ih Max): 5 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3680; 934042480112; BT168E

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 13511
Product data sheet
Symbol
R
R
Fig 6. Transient thermal impedance as a function of pulse width.
th(j-lead)
th(j-a)
Z
th(j-lead)
(K/W)
10
10
10
10
1
2
1
2
10
Parameter
thermal resistance from junction to
lead
thermal resistance from junction to
ambient
5
Thermal characteristics
10
4
10
3
Conditions
printed-circuit board
mounted; lead length = 4 mm
Rev. 04 — 20 August 2004
10
Thyristors logic level for RCD/GFI/LCCB applications
2
10
1
Min
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT168 series
P
1
Typ
-
150
t
p
T
t
p
(s)
001aab451
Max
60
-
=
t
T
t
p
10
Unit
K/W
K/W
5 of 12