BT168E NXP Semiconductors, BT168E Datasheet

SCRs BULK MOSFET

BT168E

Manufacturer Part Number
BT168E
Description
SCRs BULK MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BT168G112.pdf (12 pages)

Specifications of BT168E

Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
500 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SOT-54
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT168E,112
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Discrete pinning
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Description
anode (a)
gate (g)
cathode (k)
Passivated, sensitive gate thyristors in a SOT54 plastic package.
BT168 series
Thyristors logic level for RCD/GFI/LCCB applications
Rev. 04 — 20 August 2004
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
For use in Residual Current Devices (RCD), Ground Fault Interrupters (GFI) and
Leakage Current Circuit Breakers (LCCB) applications, where a minimum I
needed.
V
V
DRM
DRM
, V
, V
RRM
RRM
500 V (BT168E)
600 V (BT168G)
Simplified outline
SOT54 (TO-92)
I
I
I
T(RMS)
T(AV)
TSM
3
2
1
8 A.
0.5 A
0.8 A
Product data sheet
Symbol
sym037
GT
limit is

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BT168E Summary of contents

Page 1

... Leakage Current Circuit Breakers (LCCB) applications, where a minimum I needed. 1.4 Quick reference data V DRM V DRM 2. Pinning information Table 1: Discrete pinning Pin Description 1 anode (a) 2 gate (g) 3 cathode ( 500 V (BT168E) RRM , V 600 V (BT168G) RRM Product data sheet I 0.8 A T(RMS) I 0.5 A T(AV TSM Simplified outline Symbol 3 2 ...

Page 2

... Package Name BT168E - BT168G 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter repetitive peak off-state voltage DRM RRM BT168E BT168G I average on-state current T(AV) I RMS on-state current T(RMS) I non-repetitive peak on-state current TSM ...

Page 3

Philips Semiconductors 0.8 P tot (W) 0.6 0 form factor = I /I T(RMS) T(AV) Fig 1. Total power dissipation as a function of average on-state current; maximum values TSM (A) 8 ...

Page 4

Philips Semiconductors TSM ( ms. p Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values T(RMS) (A) 1.5 1 ...

Page 5

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-lead) lead R thermal resistance from junction to th(j-a) ambient th(j-lead) (K/ ...

Page 6

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise stated. j Symbol Parameter Static characteristics I gate trigger current GT I latching current L I holding current H V on-state voltage T V gate trigger voltage ...

Page 7

Philips Semiconductors 1.6 V GT(Tj) V GT(25 C) 1.2 0.8 0 Fig 7. Normalized gate trigger voltage as a function of junction temperature ( (1) (2) (3) 0 0.4 1.2 ...

Page 8

Philips Semiconductors 3 I H(Tj Fig 11. Normalized holding current as a function of junction temperature. 7. Package information Epoxy meets requirements of UL94 V-0 ...

Page 9

Philips Semiconductors 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 ...

Page 10

Philips Semiconductors 9. Revision history Table 6: Revision history Document ID Release date BT168_SERIES_4 20040820 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. BT168_SERIES_3 20010902 ...

Page 11

Philips Semiconductors 10. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 12

Philips Semiconductors 14. Contents 1 Product profi 1.1 General description ...

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