BT168E,112 NXP Semiconductors, BT168E,112 Datasheet - Page 2

• Manufacturer Part Number: BT168E,112
• Description: THYRISTOR .8A 500V TO-92
• Manufacturer: NXP Semiconductors

Specifications of BT168E,112

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 500V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• On-state Rms Current (it Rms): 0.8 A
• Forward Voltage Drop: 1.25 V
• Gate Trigger Voltage (vgt): 0.3 V
• Gate Trigger Current (igt): 50 uA
• Holding Current (ih Max): 5 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3680; 934042480112; BT168E

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
9397 750 13511
Product data sheet
Type number
BT168E
BT168G
Symbol
V
I
I
I
I
dI
I
V
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
RGM
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/ s.
, V
RRM
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
average on-state current
RMS on-state current
non-repetitive peak on-state current
I
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
BT168E
BT168G
Package
Name
-
Description
plastic single-ended leaded (through hole) package; 3 leads
Rev. 04 — 20 August 2004
Conditions
half sine wave;
T
see
all conduction angles;
see
half sine wave;
T
surge;
see
t = 10 ms
I
dI
over any 20 ms period
TM
lead
j
G
t = 10 ms
t = 8.3 ms
= 25 C prior to
/dt = 100 mA/ s
= 2 A; I
Figure 1
Figure 4
Figure 2
Thyristors logic level for RCD/GFI/LCCB applications
83 C;
G
= 10 mA;
and
and
5
3
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT168 series
Max
500
600
0.5
0.8
8
9
0.32
50
1
5
5
2
0.1
+150
125
Version
SOT54
Unit
V
V
A
A
A
A
A
A/ s
A
V
V
W
W
C
C
2
s
2 of 12