HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 6

• Manufacturer Part Number: HSG1002VE-TL-E
• Description: IC AMP HBT SIGE 38GHZ MFPAK-4
• Manufacturer: Renesas Electronics America

Specifications of HSG1002VE-TL-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 38GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
• Gain: 8dB ~ 19.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-MFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HSG1002
Rev.1.00, Apr.12.2004, page 4 of 37
30
25
20
15
10
30
25
20
15
10
30
25
20
15
10
5
0
5
0
5
0
1
1
1
|S
|S
V
f=1.8GHz
V
f=5.8GHz
V
f=2.4GHz
MSG
CE
CE
21
21
|S
CE
|
|
=2V
=2V
21
2
2
Collector Current
=1V
Collector Current
Collector Current
,MSG,MAG vs. Collector Current
,MSG,MAG vs. Collector Current
|
2
,MSG vs. Collector Current
MSG
MSG
10
10
10
S21
S21
MAG
I
C
I
I
C
C
S21
(mA)
(mA)
(mA)
MAG
100
100
100
30
25
20
15
10
30
25
20
15
10
30
25
20
15
10
5
0
5
0
5
0
1
1
1
|S
|S
V
f=1.8GHz
V
f=5.8GHz
V
f=2.4GHz
21
CE
21
CE
MSG
CE
|S
|
|
2
=3V
=1V
2
21
=2V
,MSG,MAG vs. Collector Current
Collector Current
,MSG,MAG vs. Collector Current
Collector Current
Collector Current
|
2
,MSG vs. Collector Current
MSG
MSG
10
10
10
MAG
S21
S21
S21
I
C
I
I
C
C
(mA)
MAG
(mA)
(mA)
100
100
100