HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 4

• Manufacturer Part Number: HSG1002VE-TL-E
• Description: IC AMP HBT SIGE 38GHZ MFPAK-4
• Manufacturer: Renesas Electronics America

Specifications of HSG1002VE-TL-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 38GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
• Gain: 8dB ~ 19.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-MFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Item
DC current transfer ratio
Reverse Transfer Capacitance
Transition Frequency
Insertion power gain
Maximum Stable Gain
Power Gain
Noise figure
Maximum Available Gain
HSG1002
Electrical Characteristics
Notes: 1. MSG = |S
Rev.1.00, Apr.12.2004, page 2 of 37
2. MAG = |S
note1
21
21
| / |S
| / |S
note2
12
12
|
|(K-(K
Symbol
h
C
f
|S21|
MSG
PG
NF
MAG
T
FE
re
2
-1)
2
1/2
)
Min
100
8
Typ
200
0.09
38
18.5
16.5
11
21
20
16
19.5
17.5
11
0.7
0.8
1.2
13
Max
300
1.8
Unit
pF
GHz
dB
dB
dB
dB
dB
Test conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
CE
CB
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
= 0, f = 1 MHz
= 5 mA
= fT peak, f = 1 GHz
= 5 mA, f = 1.8 GHz
= 5 mA, f = 2.4 GHz
= 10 mA, f = 5.8 GHz
= 5 mA, f = 1.8 GHz
= 5 mA, f = 2.4 GHz
= 10 mA, f = 5.8 GHz
= 5 mA, f = 1.8 GHz
= 5 mA, f = 2.4 GHz
= 10 mA, f = 5.8 GHz
= 5 mA, f = 1.8 GHz
= 5 mA, f = 2.4 GHz
= 10 mA, f = 5.8 GHz
= 10 mA, f = 5.8 GHz
(Ta = 25°C)