HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 39
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HSG1002VE-TL-E
Manufacturer Part Number
HSG1002VE-TL-E
Description
IC AMP HBT SIGE 38GHZ MFPAK-4
Manufacturer
Renesas Electronics America
Datasheet
1.HSG1002VE-TL-E.pdf
(40 pages)
Specifications of HSG1002VE-TL-E
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3.5V
Frequency - Transition
38GHz
Noise Figure (db Typ @ F)
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain
8dB ~ 19.5dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 2V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
4-MFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Part Name
HSG1002VE-
HSG1002
Package Dimensions
Ordering Information
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
Rev.1.00, Apr.12.2004, page 37 of 37
MFPAK-4
EIAJ Package Code
production before ordering the product.
A
y S
A
X
e
c
M
JEDEC Code
A-A Section
D
S A
b
b
1
10,000 pcs
Quantity
c
1
b
Mass (g) (reference value)
E
A
A
A
2
1
H
E
A
S
0.0016
L
C
Lead Material
Cu Alloy
Shipping Container
178 mm Taping Reel
I 1
Pattern of terminal position areas
b
2
e
e
L
1
P
Symbol
A
A
A
1
2
Dimension in Millimeters
Min.
0.5
0
0.5
0.15
—
0.1
—
1.35
0.7
—
1.15
0.1
0.15
—
—
—
—
Nom.
—
—
—
0.22
0.2
0.13
0.11
1.4
0.8
0.45
1.2
0.2
—
—
—
0.75
—
Max.
0.55
0.01
0.54
0.3
—
0.15
—
1.45
0.9
—
1.25
0.3
0.45
0.05
0.35
—
0.5