HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 27
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HSG1002VE-TL-E
Manufacturer Part Number
HSG1002VE-TL-E
Description
IC AMP HBT SIGE 38GHZ MFPAK-4
Manufacturer
Renesas Electronics America
Datasheet
1.HSG1002VE-TL-E.pdf
(40 pages)
Specifications of HSG1002VE-TL-E
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3.5V
Frequency - Transition
38GHz
Noise Figure (db Typ @ F)
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain
8dB ~ 19.5dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 2V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
4-MFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
f (MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
4200
4400
4600
4800
5000
5200
5400
5600
5800
6000
HSG1002
S Parameter
Rev.1.00, Apr.12.2004, page 25 of 37
S11
MAG
0.674
0.634
0.592
0.558
0.528
0.504
0.488
0.477
0.468
0.463
0.459
0.456
0.453
0.453
0.453
0.454
0.455
0.456
0.458
0.461
0.465
0.471
0.477
0.482
0.488
0.495
0.501
0.505
0.511
0.517
0.523
0.529
0.535
0.540
0.545
0.550
0.554
0.558
0.562
0.566
ANG
-24.0
-47.8
-67.1
-83.9
-97.6
-109.2
-118.5
-126.6
-133.6
-139.8
-145.0
-149.8
-153.9
-157.8
-161.4
-164.5
-167.5
-170.3
-172.9
-175.3
-179.8
176.2
172.5
169.0
166.0
163.0
160.1
157.4
155.3
153.0
150.7
148.5
146.5
144.4
142.4
140.4
138.6
136.7
134.8
132.8
S21
MAG
57.42
53.46
47.90
42.40
37.38
33.08
29.49
26.51
24.01
21.92
20.13
18.59
17.24
16.09
15.07
14.15
13.34
12.62
11.97
11.37
10.34
9.48
8.74
8.11
7.55
7.07
6.64
6.25
5.91
5.61
5.33
5.09
4.86
4.65
4.45
4.28
4.11
3.96
3.82
3.69
ANG
163.6
149.4
137.6
128.3
120.8
114.8
109.9
105.7
102.1
99.0
96.1
93.6
91.3
89.1
87.1
85.2
83.4
81.7
80.0
78.4
75.3
72.4
69.7
67.0
64.5
61.9
59.5
57.1
54.9
52.6
50.3
48.1
45.9
43.7
41.5
39.3
37.1
35.0
32.8
30.7
S12
MAG
0.0107
0.0099
0.0137
0.0178
0.0181
0.0207
0.0228
0.0238
0.0247
0.0261
0.0283
0.0287
0.0293
0.0323
0.0329
0.0349
0.0357
0.0376
0.0381
0.0397
0.0426
0.0457
0.0482
0.0513
0.0545
0.0573
0.0600
0.0625
0.0659
0.0691
0.0726
0.0751
0.0784
0.0808
0.0839
0.0863
0.0896
0.0922
0.0953
0.0977
ANG
49.1
78.2
59.5
56.0
54.4
52.0
50.5
48.9
49.4
50.1
50.7
50.3
50.8
51.2
50.6
52.8
51.7
52.7
52.7
53.2
52.2
51.9
51.3
51.7
50.5
50.1
49.8
49.4
48.9
47.4
46.2
45.4
44.2
43.1
42.2
40.3
39.8
39.0
37.0
35.9
(V
CE
= 2 V, I
S22
MAG
0.869
0.863
0.763
0.669
0.591
0.522
0.466
0.421
0.381
0.349
0.320
0.297
0.274
0.256
0.239
0.224
0.211
0.199
0.188
0.179
0.162
0.147
0.136
0.126
0.119
0.114
0.111
0.108
0.107
0.109
0.112
0.115
0.117
0.121
0.124
0.129
0.134
0.138
0.143
0.146
C
= 30 mA, Z
-104.9
-110.5
-117.6
-124.3
-131.0
-137.8
-143.7
-149.8
-155.9
-161.5
-166.0
-170.6
-175.0
-179.5
176.9
173.4
169.7
166.3
ANG
-13.2
-27.1
-37.3
-45.4
-51.4
-56.1
-59.9
-63.2
-66.0
-68.4
-70.7
-72.5
-74.6
-76.4
-78.5
-80.3
-82.3
-84.4
-86.9
-89.0
-93.7
-98.7
O
= 50 )