BLS3135-65,114 NXP Semiconductors, BLS3135-65,114 Datasheet - Page 6

• Manufacturer Part Number: BLS3135-65,114
• Description: TRANSISTOR RF POWER SOT422A
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-65,114

• Package / Case: SOT-422A
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.5GHz
• Gain: 7dB
• Power - Max: 200W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 2A, 5V
• Current - Collector (ic) (max): 8A
• Mounting Type: Surface Mount
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055678114; BLS3135-65 TRAY; BLS3135-65 TRAY

Philips Semiconductors
1999 Aug 16
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are located on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
The striplines are on double-clad printed-circuit board with Duroid dielectric (
input
Fig.9
Component layout for 3.1 to 3.5 GHz class-C test circuit.
30
6
r
= 2.2); thickness = 0.38 mm.
30
MCD757
output
40
BLS3135-65
Product specification