BLS3135-50,114 NXP Semiconductors, BLS3135-50,114 Datasheet - Page 5

• Manufacturer Part Number: BLS3135-50,114
• Description: TRANSISTOR RF POWER SOT422A
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-50,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.5GHz
• Gain: 8dB
• Power - Max: 80W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1.5A, 5V
• Current - Collector (ic) (max): 6A
• Mounting Type: Surface Mount
• Package / Case: SOT-422A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Other names: 934055198114; BLS3135-50 TRAY; BLS3135-50 TRAY

Philips Semiconductors
2003 Apr 15
handbook, halfpage
handbook, halfpage
Microwave power transistor
V
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
V
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
Fig.4
CB
CB
(W)
Fig.2
(%)
P L
= 40 V; class-C; t
= 40 V; class-C; t
80
60
40
20
50
40
30
20
10
C
0
0
0
0
Collector efficiency as a function of load
power; typical values.
load power as a function of drive
power; typical values.
2
(3)
20
p
p
= 100 s;
(2)
= 100 s;
4
(1)
40
= 10%.
= 10%.
(2)
(3)
6
(1)
60
(3)
8
P L (W)
P D (W)
MCD758
MCD760
10
80
5
handbook, halfpage
handbook, halfpage
V
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
V
Fig.5
CB
CB
(dB)
G p
Fig.3
(dB)
G p
= 40 V; class-C; P
= 40 V; class-C; P
10
10
8
6
4
2
0
2
8
6
4
2
0
3.0
0
Losses
Return
Power gain and input return losses as
functions of frequency; typical values.
Power gain as a function of load
power; typical values.
G p
3.1
20
L
L
(2)
= 50 W; t
= 50 W; t
3.2
(1)
40
p
p
= 100 s; = 10%.
= 100 s; = 10%.
(3)
3.3
BLS3135-50
Product specification
60
3.4
P L (W)
f (GHz)
MCD759
MCD761
3.5
80
20
16
12
8
4
0
Losses
Return
(dB)