BGR 420 H6327 Infineon Technologies, BGR 420 H6327 Datasheet - Page 6

• Manufacturer Part Number: BGR 420 H6327
• Description: TRANS RF NPN 13V 25MA SOT343
• Manufacturer: Infineon Technologies

Specifications of BGR 420 H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 13V
• Noise Figure (db Typ @ F): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
• Power - Max: 120mW
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Frequency - Transition: -
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Lead Free Status / Rohs Status: Details

3
Table 4
Parameter
VCC-GND cutoff current
Current at pin VCC
Table 5
Parameter
Insertion power gain
Reverse isolation
Noise figure,
Third order intercept point at the
output
1 dB compression point at the output
Return loss input
Return loss output
1)
Figure 2
Data Sheet
OIP
is 50
1)
3
value depends on termination of all intermodulation frequency components. Termination used for this measurement
from 0.1 MHz to 6 GHz.
Electrical Characteristics
DC characteristics at
AC characteristics (measured in test circuit
T
BGR420 test circuit
Z
A
S
= 25 °C,
=
Z
Sopt
V
BB
= 2.8 V,
T
A
V
= 25 °C, unless otherwise specified
Symbol
I
I
CC
Symbol
S
S
NF
OIP
OP
S
S
CC
CC
12
11
22
21
= 3.6 V,
-1dB
3
Min.
7
Z
Min.
0
= 50
6
Figure
, unless otherwise specified
Typ.
13
Typ.
26.0
15.5
-32.5
-23.4
1.5
1.7
21
23
5.5
7.4
-7.3
-11
-2.5
-9.5
Values
Values
2; verified by random sampling)
Max.
10
20
Max.
Unit
mA
Unit
dB
dB
dB
dBm
dBm
dB
dB
A
Electrical Characteristics
Rev. 1.0, 2008-06-06
Note /
Test Condition
V
V
V
V
Note /
Test Condition
f
f
f
f
f
f
f
f
f
f
f
f
f
f
= 0.4 GHz
= 1.8 GHz
= 0.4 GHz
= 1.8 GHz
= 0.4 GHz
= 1.8 GHz
= 0.4 GHz
= 1.8 GHz
= 0.4 GHz
= 1.8 GHz
= 0.4 GHz
= 1.8 GHz
= 0.4 GHz
= 1.8 GHz
CC
IN
BB
CC
= 0
= 2.8 V,
= 13 V,
= 3.6 V
BGR420
I
I
BB
IN
= 0,
= 0,