BGR 420 H6327 Infineon Technologies, BGR 420 H6327 Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BGR 420 H6327
Manufacturer Part Number
BGR 420 H6327
Description
TRANS RF NPN 13V 25MA SOT343
Manufacturer
Infineon Technologies
Datasheet
1.BGR_420_H6327.pdf
(7 pages)
Specifications of BGR 420 H6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
13V
Noise Figure (db Typ @ F)
1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
Power - Max
120mW
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Frequency - Transition
-
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Lead Free Status / Rohs Status
Details
BGR420
BGR420, NPN Silicon RF Transistor With Bias Circuitry
Revision History: 2008-06-06, Rev. 1.0
Prevision History: no previous version
Page
Subjects (major changes since last revision)
Trademarks
®
SIEGET
is a registered trademark of Infineon Technologies AG.
Data Sheet
3
Rev. 1.0, 2008-06-06