BGR 420 H6327 Infineon Technologies, BGR 420 H6327 Datasheet
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BGR 420 H6327
Specifications of BGR 420 H6327
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BGR 420 H6327 Summary of contents
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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...
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... BGR420, NPN Silicon RF Transistor With Bias Circuitry Revision History: 2008-06-06, Rev. 1.0 Prevision History: no previous version Page Subjects (major changes since last revision) Trademarks ® SIEGET is a registered trademark of Infineon Technologies AG. Data Sheet 3 BGR420 Rev. 1.0, 2008-06-06 ...
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NPN Silicon RF Transistor With Bias Circuitry* Features NF • Noise figure = 1 0.4 GHz S • Gain = 0.4 GHz 21 • On chip bias circuitry bias current at V ...
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Table 1 Pinning table Pin Function 1 RFIN 2 GND 3 RFOUT (VCC) 4 VBB 2.1 Maximum Ratings Note: All Voltages refer to GND-node Table 2 Maximum ratings Parameter Current at pin VCC Voltage at pin VCC Current at pin ...
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Electrical Characteristics Table 4 DC characteristics at Parameter VCC-GND cutoff current Current at pin VCC Table 5 AC characteristics (measured in test circuit ° Parameter Insertion power gain Reverse isolation ...
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Package Information 0.3 Figure 3 Package Outline SOT343 Figure 4 Footprint of SOT343 Figure 5 Tape of SOT343 Data Sheet 2 ±0.2 0.1 MAX +0.1 -0.05 +0.1 0.6 4x -0.05 0.1 M 0.6 ...