BFP 520 H6327 Infineon Technologies, BFP 520 H6327 Datasheet - Page 9

• Manufacturer Part Number: BFP 520 H6327
• Description: TRANS RF NPN 2.5V 40MA SOT343
• Manufacturer: Infineon Technologies

Specifications of BFP 520 H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 45GHz
• Noise Figure (db Typ @ F): 0.95dB @ 1.8GHz
• Gain: 24dB
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 40mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Datasheet Revision History: 16 August 2010
This datasheet replaces the revision from 30 March 2007 and 28 June 2010.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded
and updated.
Previous Revisions: 30 March 2007 and 28 June 2010
Page
1
2
4
7
Subject (changes since last revision)
Feature list updated
Typical values for leakage currents included, values for maximum leakage
currents reduced
OIP3 characteristic added
SPICE model parameters removed from the datasheet, link to the respective
internet site added
2010-08-16
BFP520