BFP 520 H6327 Infineon Technologies, BFP 520 H6327 Datasheet - Page 4
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BFP 520 H6327
Manufacturer Part Number
BFP 520 H6327
Description
TRANS RF NPN 2.5V 40MA SOT343
Manufacturer
Infineon Technologies
Datasheet
1.BFP520E6327.pdf
(10 pages)
Specifications of BFP 520 H6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3.5V
Frequency - Transition
45GHz
Noise Figure (db Typ @ F)
0.95dB @ 1.8GHz
Gain
24dB
Power - Max
100mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 20mA, 2V
Current - Collector (ic) (max)
40mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Total power dissipation P
Third order Intercept Point IP
(Output, Z
V
CE
mW
120
100
= parameter, f = 900 MHz
90
80
70
60
50
40
30
20
10
0
0
S
20
= Z
L
40
= 50
60
)
80
tot
100
= (T
3
=
120 °C
S
)
(I
T
C
S
)
150
Collector-base capacitance C
f = 1MHz
Transition frequency f
f = 2 GHz
V
CE
GHz
0.15
0.05
pF
0.3
0.2
0.1
= parameter in V
52
44
40
36
32
28
24
20
16
12
0
8
4
0
0
0
5
0.5
10
15
1
20
1.5
T
= (I
25
C
30
2
2010-08-16
)
cb
35 mA
= (V
BFP520
V
0.75
V
I
C
CB
2
1
0.5
CB
45
3
)