BFP 520 H6327 Infineon Technologies, BFP 520 H6327 Datasheet - Page 3
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BFP 520 H6327
Manufacturer Part Number
BFP 520 H6327
Description
TRANS RF NPN 2.5V 40MA SOT343
Manufacturer
Infineon Technologies
Datasheet
1.BFP520E6327.pdf
(10 pages)
Specifications of BFP 520 H6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3.5V
Frequency - Transition
45GHz
Noise Figure (db Typ @ F)
0.95dB @ 1.8GHz
Gain
24dB
Power - Max
100mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 20mA, 2V
Current - Collector (ic) (max)
40mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Minimum noise figure
I
f = 1.8 GHz
Power gain, maximum stable
I
f = 1.8 GHz
Insertion power gain
V
Z
Third order intercept point at output
V
Z
V
Z
1dB Compression point at output
I
Z
I
Z
C
C
C
C
C
G
S
S
S
L
L
CB
CE
EB
CE
CE
CE
ms
= 30 mA, V
= 2 mA, V
= 20 mA, V
= 20 mA, V
= 7 mA, V
= Z
= Z
= Z
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, I
= 2 V, I
= 2 V, I
= |S
Lopt
Lopt
L
Sopt,
Sopt,
21
= 50
, f = 1.8 GHz
, f = 1.8 GHz
/ S
Z
Z
C
C
C
CE
CE
L
L
12
CE
CE
= 20 mA, f = 1.8 GHz,
= 20 mA, f = 1.8 GHz,
= 7 mA, f = 1.8 GHz,
CE
= Z
= Z
|
= 2 V, Z
= 2 V, Z
= 2 V, f = 2 GHz
= 2 V, Z
= 2 V, Z
Lopt
Lopt
BE
BE
S
S
S
S
CB
= Z
= Z
= 0 ,
= 0 ,
= Z
= Z
= 0 ,
Sopt
1)
Sopt
Sopt
Sopt
A
,
,
= 25°C, unless otherwise specified
, Z
,
L
= Z
Lopt
,
Symbol
f
C
C
C
NF
G
|S
IP
P
T
-1dB
cb
ce
eb
ms
21
3
min
|
2
min.
32
-
-
-
-
-
-
-
-
-
-
Values
21.5
0.07
0.33
0.95
typ.
0.3
45
24
25
17
12
5
2010-08-16
max.
0.13
-
-
-
-
-
-
-
-
-
-
BFP520
Unit
GHz
pF
dB
dB
dBm