BFP 460 E6327 Infineon Technologies, BFP 460 E6327 Datasheet - Page 7

• Manufacturer Part Number: BFP 460 E6327
• Description: TRANSISTOR RF NPN 50MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 460 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.8V
• Frequency - Transition: 22GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
• Gain: 12.5dB ~ 26.5dB
• Power - Max: 230mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 20mA, 3V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 90 @ 20mA @ 3V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 22000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 460 E6327; BFP460E6327INTR; BFP460E6327XT; SP000015119

Third order Intercept Point IP
(Output, Z
V
Source impedance for min.
noise figure vs. frequency
V
CE
CE
dBm
= parameter, f = 100MHz
= 2V, I
32
24
20
16
12
8
4
0
0
S
10
=Z
C
= parameter
L
20
=50 Ω )
30
40
50
1.5V
2V
2.5V
3V
4V
3
= ƒ (I
60
mA
C
IC
)
80
7
Noise figure F = ƒ (f)
V
CE
= 2V, Z
S
= Z
Sopt ,
I
C
= parameter
2010-05-17
BFP460