BFP 460 E6327 Infineon Technologies, BFP 460 E6327 Datasheet - Page 10

• Manufacturer Part Number: BFP 460 E6327
• Description: TRANSISTOR RF NPN 50MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 460 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.8V
• Frequency - Transition: 22GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
• Gain: 12.5dB ~ 26.5dB
• Power - Max: 230mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 20mA, 3V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 90 @ 20mA @ 3V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 22000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 460 E6327; BFP460E6327INTR; BFP460E6327XT; SP000015119

Datasheet Revision History: 17 May 2010
This datasheet replaces the revision from 14 August 2008.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded
and updated.
Previous Revision: 14 August 2008
Page
5 - 7
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Subject (changes since last revision)
Maximum ratings for collector current ICmax, base current IBmax and total
power dissipation Ptot increased
Typical values for leakage currents included, maximum leakage current values
reduced
Noise description at 100 MHz added
Gain and linearity description at 100 MHz added
Curves for IP3 and noise at 100 MHz added
10
2010-05-17
BFP460