BFP 460 E6327 Infineon Technologies, BFP 460 E6327 Datasheet - Page 5

• Manufacturer Part Number: BFP 460 E6327
• Description: TRANSISTOR RF NPN 50MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 460 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.8V
• Frequency - Transition: 22GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
• Gain: 12.5dB ~ 26.5dB
• Power - Max: 230mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 20mA, 3V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 90 @ 20mA @ 3V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 22000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 460 E6327; BFP460E6327INTR; BFP460E6327XT; SP000015119

Total power dissipation P
Third order Intercept Point IP
(Output, Z
V
CE
dBm
260
220
200
180
160
140
120
100
= parameter, f = 1800MHz
V
80
60
40
20
33
29
27
25
23
21
19
17
15
13
11
0
9
7
5
0
0
15
S
=Z
10
30
L
=50 Ω )
45
20
60
75
30
90 105 120 A
tot
= ƒ (T
3
40
= ƒ (I
S
mA
C
)
I
)
C
4V
3V
2V
1V
150
55
5
Collector-base capacitance C
f = 1MHz
Transition frequency f
f = 1 GHz
V
CE
GHz
pF
0.7
0.5
0.4
0.3
0.2
0.1
= parameter
24
20
18
16
14
12
10
0
8
6
4
0
0
2
10
4
20
6
T
30
= ƒ (I
8
C
40
2010-05-17
)
10
cb
= ƒ (V
BFP460
mA
V
3-4V
2V
1V
V
I
C
CB
CB
14
60
)