BFP 460 E6327 Infineon Technologies, BFP 460 E6327 Datasheet - Page 6

• Manufacturer Part Number: BFP 460 E6327
• Description: TRANSISTOR RF NPN 50MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 460 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.8V
• Frequency - Transition: 22GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
• Gain: 12.5dB ~ 26.5dB
• Power - Max: 230mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 20mA, 3V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 90 @ 20mA @ 3V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 22000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 460 E6327; BFP460E6327INTR; BFP460E6327XT; SP000015119

Power gain G
V
Power gain G
I
f = parameter in GHz
C
CE
= 20 mA
dB
dB
= 3 V, I
50
40
35
30
25
20
15
10
24
20
18
16
14
12
10
5
0
8
6
4
0.5
0
|S21|²
1
C
1
Gms
= 20 mA
ma
ma
1.5
, G
, G
2
2
ms
ms
, |S
= ƒ (V
2.5
3
21
|
3
2
CE
4
= ƒ (f)
Gma
)
3.5
GHz
V
f
V
0.9
1.8
2.4
3
4
5
6
CE
4.5
6
6
Power gain G
V
f = parameter in GHz
Noise figure F = ƒ (I
V
Z
S
CE
CE
= Z
dB
= 3V
= 2 V, f = parameter
24
20
18
16
14
12
10
8
6
4
Sopt
0
10
ma
, G
20
ms
C
)
= ƒ (I
30
C
40
2010-05-17
)
BFP460
mA
0.9
1.8
2.4
3
4
5
6
I
C
60