BFR 183 E6327 Infineon Technologies, BFR 183 E6327 Datasheet - Page 5
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BFR 183 E6327
Manufacturer Part Number
BFR 183 E6327
Description
TRANSISTOR RF NPN 12V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BFR_183_E6327.pdf
(7 pages)
Specifications of BFR 183 E6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain
17.5dB
Power - Max
450mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 15mA, 8V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
450 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR183E6327XT
SP000011054
SP000011054
Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
10
500
400
350
300
250
200
150
100
50
-
0
2
1
0
10
0
/ P
-7
totDC
20
10
-6
=
40
10
-5
( t
p
60
)
10
-4
80
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot
-3
100
= ( T
10
-2
120 °C
S
)
T
t
s
p
S
150
10
0
5
Permissible Pulse Load R
K/W
10
10
10
3
2
1
10
-7
10
-6
10
-5
10
-4
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
thJS
-3
10
2007-03-30
=
-2
BFR183
( t
t
s
p
p
)
10
0