BFR 182W E6327 Infineon Technologies, BFR 182W E6327 Datasheet
BFR 182W E6327
Specifications of BFR 182W E6327
BFR182WE6327
BFR182WE6327INTR
BFR182WE6327XT
SP000011053
Related parts for BFR 182W E6327
BFR 182W E6327 Summary of contents
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NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from • GHz 0 900 MHz T • Pb-free (RoHS compliant) package • Qualified ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...
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Total power dissipation P 300 mW 200 150 100 Permissible Pulse Load = ƒ totmax totDC 0.005 0.01 0.02 0. ...
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SPICE Parameter For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. 5 BFR182W 2010-04-06 ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT323 2 ±0.2 0.1 MAX. +0.1 3x 0.3 -0.05 0 0.65 0.65 0.2 0.6 ...
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... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...