BFR 183 E6327 Infineon Technologies, BFR 183 E6327 Datasheet - Page 4

• Manufacturer Part Number: BFR 183 E6327
• Description: TRANSISTOR RF NPN 12V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFR 183 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
• Gain: 17.5dB
• Power - Max: 450mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 450 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR183E6327XT; SP000011054

IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
1.0345
14.772
1.2149
3.4276
0.85331
1.0112
23.077
22.746
1.8773
1.1967
1.0553
0
3
fA
V
-
V
-
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
115.98
0.14562
10.016
0.013483
2.5426
1.3435
1.0792
0.36823
0
0.3
0
0
0.54852
4
-
A
-
A
-
V
-
deg
-
fF
-
L
L
L
L
L
L
C
C
C
Valid up to 6GHz
BI
BO
EI
EO
CI
CO
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
BE
CB
CE
=
=
=
=
=
=
=
=
=
0.80799
16.818
0.99543
1.3559
0.43801
0.20486
0.45354
0.50905
460.11
0.053823
0.75
1.11
300
0.85
0.51
0.69
0.61
0
0.49
73
84
165
2007-03-30
BFR183
-
fA
-
fA
mA
-
V
fF
-
V
eV
K
nH
nH
nH
nH
nH
nH
fF
fF
fF