BFR 183 E6327 Infineon Technologies, BFR 183 E6327 Datasheet - Page 2
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BFR 183 E6327
Manufacturer Part Number
BFR 183 E6327
Description
TRANSISTOR RF NPN 12V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BFR_183_E6327.pdf
(7 pages)
Specifications of BFR 183 E6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain
17.5dB
Power - Max
450mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 15mA, 8V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
450 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR183E6327XT
SP000011054
SP000011054
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain-
I
C
C
CE
CB
EB
= 1 mA, I
= 15 mA, V
= 1 V, I
= 20 V, V
= 10 V, I
B
C
E
= 0
= 0
CE
BE
= 0
= 8 V, pulse measured
= 0
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
12
70
-
-
-
Values
typ.
100
-
-
-
-
max.
100
100
140
1
2007-03-30
-
BFR183
Unit
V
µA
nA
µA
-