BLT70,115 NXP Semiconductors, BLT70,115 Datasheet - Page 8
![TRANS NPN 8V 250MA SOT223](/photos/1/39/13965/568-sot-223_sc-73_sot223-1_sml.jpg)
BLT70,115
Manufacturer Part Number
BLT70,115
Description
TRANS NPN 8V 250MA SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BLT70115.pdf
(11 pages)
Specifications of BLT70,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
8V
Frequency - Transition
900MHz
Power - Max
2.1W
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 100mA, 4.8V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
8 V
Emitter- Base Voltage Vebo
2.5 V
Maximum Dc Collector Current
0.25 A
Power Dissipation
2100 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934032210115
BLT70 T/R
BLT70 T/R
BLT70 T/R
BLT70 T/R
Philips Semiconductors
1996 Feb 06
handbook, full pagewidth
UHF power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad PCB, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-AB test circuit in Fig.7.
Copper foil
C3
C1
C2
L1
C4
T1
C5
C6
R2
R1
L2
V bias
L3
C7
L5
L4
139
8
L6
Plated through holes
C8
C10
C9
L7
L9
L8
R3
V S
C12
L10
C11
BLT70
C13
MGD206
C14
Product specification
79
BLT70