BLT70,115 NXP Semiconductors, BLT70,115 Datasheet - Page 10

• Manufacturer Part Number: BLT70,115
• Description: TRANS NPN 8V 250MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BLT70,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 900MHz
• Power - Max: 2.1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 100mA, 4.8V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Maximum Dc Collector Current: 0.25 A
• Power Dissipation: 2100 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934032210115; BLT70 T/R; BLT70 T/R

Philips Semiconductors
PACKAGE OUTLINE
1996 Feb 06
handbook, full pagewidth
UHF power transistor
Dimensions in mm.
max
16
o
1.80
max
0.32
0.24
0.10
0.01
16
max
10
o
o
S
seating plane
Fig.13 SOT223H.
1
2.3
10
6.7
6.3
3.1
2.9
4.6
0.80
0.60
2
0.1 S
4
3
A
3.7
3.3
B
0.1
(4x)
0.95
0.85
M
7.3
6.7
B
MSA035 - 1
0.2
M
A
Product specification
BLT70